Richardson RFPD introduces 35W GaN RF power transistors from TriQuint

Richardson RFPD announced immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor, Inc. (TriQuint). The T1G4003532-FL and T1G4003532-FS are 37W (P3dB) discrete GaN on SiC HEMTs that operate from DC to 3.5 GHz. The devices are constructed with TriQuint's 0.25 ?m process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs by decreasing the number of amplifier line-ups needed and lowering thermal management costs. The new transistors operate at 32V for improved overall circuit efficiency, offer high compressed gain and greater than 33W of compressed output power, and may be used as a driver or final stage. The T1G4003532-FL is offered in a bolt down flanged package; the T1G4003532-FS is in a solder down earless package. Both are ideally-suited for commercial and military radar, professional and military radio communications systems, test instrumentation, jammers, and wideband or narrowband amplifiers. Richardson RFPD