Solitron Devices announces High-Rel 650V Silicon Carbide MOSFET



Solitron Devices is pleased to announce the introduction of the SD11702, 650V Silicon Carbide (SiC), ultra-low RDS(on) MOSFET.

Packaged in a hermetically sealed TO-258, the SD11702 is built for the most demanding industrial, aerospace and defence applications. With operating temperatures of -55°C to 175°C the SD11702 offers 50A of continuous drain current. With an ultra-low RDS(on) of 6.7mΩ the SD11702 provides standard gate drive characteristics allowing for replacement of standard silicon and IGBT topologies. 200°C operation is also available upon request.

Silicon Carbide provides excellent switching performance versus the best-in-class silicon MOSFETs and IGBTs with minimal variation versus temperature. The SD11702 provides ultra-low gate charge and exceptional reverse recovery characteristics making it ideal for switching inductive loads and systems that require standard gate drive.

Hermetic packaging combined with high temperature operation make the SD11702 ideal for the most rugged power supply and motor control applications requiring small size, light weight and high efficiency.

The SD11702 is available with COTS, TX, TXV and space level screening.

Samples are available from stock.

For more information, visit their site.