Space-Level Qualified Enhancement-Mode GaN Power Transistors


Rad Hard GaN discrete devices specifically designed for critical applications in the high reliability or commercial satellite space environments now available.

EPC Space announced a family of Rad Hard enhancement mode power transistors spanning a range of 40 Volts to 300 Volts, and 4 Amperes to 30 Amperes. These power transistors demonstrate significant performance advantages over competitive silicon-based Rad Hard power MOSFETs. EPC Space technology produces devices that are smaller, have lower resistance, and have many times superior switching performance compared to silicon solutions.

Critical spaceborne applications that benefit from this newly available performance include power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.

Beyond the performance improvement, these devices offer superior radiation hardness under heavy ions (SEE) and gamma radiation (TID).  SEE immunity is guaranteed at the wafer level and EPC Space devices are manufactured in an AS9100D certified facility in the greater Boston area.

For more information, visit EPC Space.