The Industry's Highest-Current GaN Power Transistors

Date
03/27/2019

Categories:
Gallium Nitride (GaN), Transistor

Tag:
@GaNSystems #gan #galliumnitride #widebandgap #widebandgapsemiconductors #transistors #psd

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The Introduction of 150 A and 80 A, 650 V GaN E-HEMT Transistors Meet Growing Electric Vehicle, Energy Storage, and Industrial Motor Demands

The GaN Systems GS-065-150-1-D.

OTTAWA, Ontario, Canada – GaN Systems announced the industry’s highest current  650 V GaN E-HEMTs with the addition of the 150 A, 650 V (GS-065-150-1-D) and the  80 A, 650 V (GS-065-080-1-D) to its line of GaN power transistors. In particular, the 150 A, 650 V transistor is unmatched on both current (80 A at 22 mΩ) and resistance (50 A at 18 mΩ) than any other GaN power transistor in the market.  
 
These products meet today’s high-power system requirements to achieve higher operating currents, higher efficiency, and smaller size and weight. The transistors, developed specifically for automotive, industrial, and renewable energy industries, feature the highest current GaN in production.

Applications include:

• Traction inverters (75 kW to 150 kW) and onboard chargers (6.6 kW to 22 kW range) in electric vehicles
• Energy storage systems and solar/PV inverters up to 50 kW+
• Industrial motor drives and controllers up to 10 kW+
 
The products are sold in a die form factor targeted for various power module topologies. Customers use the die in modules to create half-bridge, full-bridge, and six pack configurations to create optimized high-power designs with integrated gate drive circuits to differentiate their end customer solutions.  

GaN Systems

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