OTTAWA, Ontario, Canada – GaN Systems made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The numerous advantages of GaN can be applied to much higher power levels today in the automotive, industrial, and renewable energy industries.
Gan Systems’ 120 A, 650 V GaN E-HEMT increases the power density of 20 to 500 kW power conversion systems, including automotive traction inverters, very high power on-board chargers (OBC), large-scale energy storage systems, and industrial motor drives. This transistor, with twice the current capability of GaN Systems’ highest rated current part, allows customers to effectively double the power processing for the same volume.
The product (GS-065-120-1-D), sold as a die to customers building modules, is the lowest RDS(on), highest current 650 V GaN HEMT in the power semiconductor industry. Modules are an important form factor in high power electronics constituting up to 40 percent of the market based on form factor. Customers will use this die product in half-bridge, full-bridge, and six pack module topologies to create enhanced, high-power designs.
For more information, please go to www.gansystems.com.
