Toshiba Electronics launches new compact, integrated IGBT technology for induction heating

Date
11/04/2011

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Toshiba Electronics Europe (TEE) has expanded its family of compact, integrated IGBTs with a high-speed switching device that will simplify the design and reduce the component count in cooking appliances and other induction heating applications. Optimised for voltage resonance inverter switching, the new 1200V N-channel, enhancement mode' GT40QR21 comprises an IGBT and a reverse recovery freewheeling diode monolithically integrated into a single, compact device. Maximum current ratings are 40A at 25°C and 35A at 100°C and the IGBT can operate with extended junction temperatures of up to 175°C. Toshiba's GT40QR21 is designed for very high speed switching - typical IGBT fall time (tf) and turn-off time (toff) with a collector current of 40A are just 0.2μs and 0.4μs respectively, while typical reverse recovery time (trr) for the freewheeling diode is 0.6μs (IF = 15A). Typical collector-emitter saturation voltage (VCE(sat)) is rated at just 1.9V (IC = 40A). Supplied in a TO-3P(N), TO247-equivalent package the IGBT has dimensions of 15.5mm x 20.0mm x 4.5mm and a maximum junction-to-case thermal resistance (Rth(j-c)) of 0.65°C/W. For more company information visit Toshiba's web site at www.toshiba-components.com

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