Toshiba Expands Line-up of Latest Generation Trench MOSFETs with Ultra-Compact 40V Device for Low EMI Designs

Date
11/16/2017

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N-channel U-MOS-IX-H MOSFET with integrated SRD is ideal for power supplies and motor drives

Toshiba Electronics Europe has expanded its line-up of MOSFETs based on its latest generation U-MOS-IX-H trench semiconductor process with a new, ultra-compact 40V device featuring an integrated soft recovery diode (SRD).

 

Thanks to the integrated SRD, the TPH1R204PB is able to keep the spike voltages generated between the drain and source during switching very low. This makes the MOSFET suitable for synchronous rectification in the secondary side of switching power supplies that require low EMI. Target applications include high-efficiency AC-DC and DC-DC converters as well as motor drives, for example in cordless tools.

 

The TPH1R204PB is an N-channel device with a maximum on resistance (RDS(ON)) of only 1.2mΩ (@ VGS = 10V). Rated output charge (QOSS) is just 56nC. The device is supplied in a SOP advance package measuring just 5mm x 6mm x 0.95mm.

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