Estimating the useable lifetime of electronic components has always been an important task for design engineers, especially for critical applications where the design might see service for several decades. Although manufacturers do specify a lifetime on datasheets, that is under ideal conditions at normal operati
Power ratings now available are 1400 W continuous / 2400 W peak (BMR4912307/856), and 1540 W continuous / 2450 W peak (BMR4913208/857).
The new variants all feature the Flex Power Modules’ ‘Hybrid Regulated Ratio (HRR)’ technique where output voltages vary in a ratio to the input voltage but not
Semiconductor manufacturers commonly provide simulation models for their MOSFETs, but these usually only include a limited number of device parameters which have been modelled at typical operating temperatures. Nexperia’s new advanced models capture the thermal interdependency of the complete set of device pa
With its single-switch topology and high integration, including current-sensing and protection circuitry also built-in, the VIPerGaN50 comes in a compact and low-cost 5mm x 6mm package. The speed of the integrated GaN transistor allows a high switching frequency with a small and lightweight flyback transformer
The DIODES AP7387 devices are used in applications such as cordless vacuum cleaners, smoke detectors, power tools, and various other household appliances.
The devices have an input voltage range spanning from 5V to 60V, which gives them the flexibility to be connected to 5V, 9V, 12V, 24V, and 48V rai
The components will ideally be applied in power supply circuits for industrial equipment such as base stations and data centers along with IoT communication devices.
In recent years – due to the rising demand for server systems in response to the growing number of IoT devices – improving powe
Power Integrations announced the HiperPFS™-5 family of power-factor-correction (PFC) ICs with an integrated 750 V PowiGaN gallium-nitride switch. With efficiency of up to 98.3 percent, the new ICs deliver up to 240 W without a heat sink and can achieve a power factor of better than 0.98. HiperPFS-5 ICs are i
Benefiting from the latest power switching technologies, the LHA10F and LHA15F are 15% smaller and offer a leakage current 50% lower than conventional products on the market. Designed for use in a wide range of applications, the LHA10F and LHA15F are able to operate in a wide temperature range from -10 to +70 degr
Navitas Semiconductor has announced a breakthrough 20-year limited warranty for its GaNFast technology – 10x longer than typical silicon, SiC or discrete GaN power semiconductors – and a critical accelerator for GaN’s adoption in data center, solar and EV markets.
GaN is a next-generation semiconductor te
The devices build on Infineon’s state-of-the-art SiC trench technology and come in a compact D 2PAK SMD 7-pin package with .XT interconnection technology. They target high power applications including servers, telecom, industrial SMPS, fast EV charging, motor drives, solar energy systems, energy storage, and batter
Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness with fewer external components. Building upon this expansion, the 2EDN family is now able to drive the power s
The devices are optimized for automotive discrete traction inverters and expand Infineon's portfolio of discrete high-voltage devices for automotive applications. Due to their high quality, the IGBTs meet and exceed the industry standard AECQ101 for automotive components. As a result, the devices can significantly increa
Transphorm, Inc. along with Boco Electronics released that the electronics company’s 3.6 kW power supply uses SuperGaN FETs. The robust 12-volt AC-to-DC power supply achieves a peak efficiency of greater than 96% and is designed to be used in rugged environments caused by ultra-demanding ap
onsemi introduced its latest mixed-signal controller dedicated to bridgeless totem pole PFC (TP PFC) topology. The NCP1681 targets ultra-high density offline power supplies. Building upon the success of the NCP1680, which is suited for designs up to 350 W, the new controller extends th
Alpha and Omega Semiconductor Limited (AOS) announced the release of the AOZ71026QI, a 2 rail, 6 phase controller for notebook Vcore power delivery. The new device features the world’s lowest quiescent power for a multiphase controller designed to meet Intel IMVP 8, 9, 9.1, and 9.2 specifications. Co
1: Introduction
Battery chargers for electric vehicles require galvanic isolation between the grid connection and the batteries. Therefore, an EV charger almost always has two stages: a high power-quality rectifier that converts AC to DC, followed by a DC-DC converter utilizing a high-frequency transformer
Navitas Semiconductor has announced that its GaNFast technology has been selected for Samsung’s flagship Galaxy S22 Ultra and S22+ smartphones. The small, powerful 45W Super Fast charger has the highest power density of any Samsung charger, enabled by GaNFast power ICs.
The S22 Ultra, with 6.8” screen a
We’ve been running an article series from Infineon on “System solutions for battery-powered applications,” and we thought it was worth delving a little deeper – specifically, part 1, or “System solutions for robots and cordless power tool applications: A move towards the future,” by Infineon’s Ne
By: Daniel Makus, Global Application Manager xEV and EV Charging and Severin Kampl, Senior Application Engineer for High-Voltage Power Conversion, both at Infineon Technologies AG
Within the automotive industry, development and innovation continue at a rapid pace in almost all aspects of vehicle design, from the chassis to the powertrain, infotainment, connectivity, and automation. However, with the time taken to recharge electric vehicles (EVs) – especially in-journey – being cited
