EV, Hybrids & Charging Infrastructure
March 2023
Asif Jakwani, senior vice president and general manager of the Advanced Power Division, On Semi
onsemi announced a new range of ultra-efficient 1200 V insulated-gate bipolar transistors (IGBTs) that minimize conduction and switching losses at a performance level that is industry-leading in the market. Intended to enhance efficiency in fast switching applications, the new devices will be primarily us
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Date:
03/29/2023
Material properties of GaN & SiC relative to Si. Source: IDTechEx
As electric vehicle (EV) power electronics undergoes a paradigm shift towards wide bandgap (WBG) semiconductors, it is clear that silicon carbide (SiC) is becoming the material of choice, while gallium nitride (GaN) is often shoe-boxed into telecommunications or optoelectronics applications. In part, this is
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Date:
03/24/2023
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Figure 1: SiC devices offer superior properties to legacy silicon, including higher efficiency, faster switching speeds, and exceptional thermal dissipation
Silicon carbide (SiC) is a critically important technology as high-power, high-speed applications test the limits of conventional silicon. Next-generation systems not only continue to push the boundaries of performance and capability, but also disrupt and replace systems that burn fossil fuels (e.g. transportation, el
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Date:
03/01/2023
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Figure 1: Simplified schematic diagram of the bi-directional converter
The hybrid vehicle market has more than doubled from 2017 from 2.0% to 5.1% and by 2025, one of every 10 vehicles sold worldwide is projected to be a 48 V mild hybrid. 48 V systems boost fuel efficiency, deliver four times the power without increasing engine size, and reduce carbon-dioxide emissions without in
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Date:
03/01/2023
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