Glossary

 

G

Gram(s)

Gallium arsenide: A semiconductor material used for optoelectronic products such as LEDs, and for high-speed electronic devices.

A Gallium Arsenide (GaAs) Metal-Semiconductor Field-Effect-Transistor (MESFET) is a transistor built with gallium arsenide semiconductor material. The conducting channel is built using a metal-semiconductor (Schottky) junction.

Gallium arsenide field-effect transistor

Gallium Arsenide Phosphide (or, Gallium Arsenic Phosphide): A semiconductor material used for optoelectronics, including LEDs and photodiodes.

The amount of amplification accomplished by an amplifier circuit. For instance, a gain of 2 would mean the output is scaled to twice the amplitude of the input.

The gain error of a data converter indicates how well the slope of an actual transfer function matches the slope of the ideal transfer function.

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-Vdirect bandgap semiconductor with a Zinc blende crystal structure.

Gallium nitride (GaN) is a material that can be used in the production of semiconductor power devices as well as RF components and light emitting diodes (LEDs).

Galvanic isolation is a design technique that separates electrical circuits to eliminate stray currents. Signals can pass between galvanically isolated circuits, but stray currents, such as differences in ground potential or currents induced by AC power,

The application of a function that transforms brightness or luminance values. Gamma functions are usually nonlinear but monotonic and designed to affect the highlights (whitest values), midtones (grayscale), and shadows (dark areas) separately.

The controlling terminal of a FET. A voltage on the gate controls the current flow between the source and drain.

GbE

Gigabit Ethernet

Gigabit Interface Converter: A removable transceiver module permitting Fibre-Channel and Gigabit-Ethernet physical-layer transport.

GBW

Gain bandwidth

An electromechanical device that converts mechanical power into electrical power.

Gaussian frequency-shift keying: A type of FSK modulation which uses a Gaussian filter to shape the pulses before they are modulated. This reduces the spectral bandwidth and out-of-band spectrum, to meet adjacent-channel power rejection requirements.

GHz

Gigahertz

1 billion bits-per-second.

General term used to describe an undesirable, momentary pulse or unexpected input or output.

A term used in microprocessor supervisory circuit datasheets to describe the maximum magnitude and duration of a negative-going VCC supply-voltage pulse without causing the reset output to assert.

The Russian Global Navigation Satellite System

Gaussian minimum shift keying (GMSK) is a form of frequency shift keying (FSK) used in GSM systems. The tone frequencies are separated by exactly half the bit rate. It has high spectral efficiency.

Experiments, breakthroughs, and research benefiting our industry from any and all government agencies

General Purpose Interface Bus: A standard bus for controlling electronic instruments with a computer. Also called IEEE-488 bus because it is defined by ANSI/IEEE Standards 488-1978, and 488.2-1987.

General Purpose I/O: A flexible parallel interface that allows a variety of custom connections.

Gigabit passive optical network

General Packet Radio Service: A radio technology for GSM networks that adds packet-switching protocols and shorter set-up time for ISP connections; it offers the possibility to charge by amount of data sent rather than connect time.

GPS

Global Positioning System: A satellite- based navigation system in which two or more signals, received from satellites, are used to determine the receiver's position on the globe.

GSM

Global System for Mobile Communications: A land, mobile, pan-European, digital, cellular radio-communications system.

GSM network operating in the 900MHz band, as used by BT Cellnet and Vodafone in the UK, and by more than one hundred countries around the world.

GUI

Graphical user interface

 



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