Powering Communications

March 2022
Module Lifetime Estimation Tool
Estimating the useable lifetime of electronic components has always been an important task for design engineers, especially for critical applications where the design might see service for several decades. Although manufacturers do specify a lifetime on datasheets, that is under ideal conditions at normal operati
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Date:
03/30/2022

New variants for popular BMR491 quarter-brick DC/DC range
Power ratings now available are 1400 W continuous / 2400 W peak (BMR4912307/856), and 1540 W continuous / 2450 W peak (BMR4913208/857).   The new variants all feature the Flex Power Modules’ ‘Hybrid Regulated Ratio (HRR)’ technique where output voltages vary in a ratio to the input voltage but not
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Date:
03/28/2022
Electrothermal models cover MOSFET operating temperature range
Semiconductor manufacturers commonly provide simulation models for their MOSFETs, but these usually only include a limited number of device parameters which have been modelled at typical operating temperatures. Nexperia’s new advanced models capture the thermal interdependency of the complete set of device pa
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Date:
03/28/2022
 60V, 70dB PSRR LDOs Deliver Industry-Leading Quiescent Current
The DIODES AP7387 devices are used in applications such as cordless vacuum cleaners, smoke detectors, power tools, and various other household appliances.   The devices have an input voltage range spanning from 5V to 60V, which gives them the flexibility to be connected to 5V, 9V, 12V, 24V, and 48V rai
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Date:
03/28/2022
ROHM starts production of 150V GaN HEMTs
The components will ideally be applied in power supply circuits for industrial equipment such as base stations and data centers along with IoT communication devices.   In recent years – due to the rising demand for server systems in response to the growing number of IoT devices – improving powe
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Date:
03/28/2022
High-Efficiency Quasi-Resonant PFC IC with 750 V GaN Switch
Power Integrations announced the HiperPFS™-5 family of power-factor-correction (PFC) ICs with an integrated 750 V PowiGaN gallium-nitride switch. With efficiency of up to 98.3 percent, the new ICs deliver up to 240 W without a heat sink and can achieve a power factor of better than 0.98. HiperPFS-5 ICs are i
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Date:
03/28/2022
10W and 15W units added to low profile open frame power supplies
Benefiting from the latest power switching technologies, the LHA10F and LHA15F are 15% smaller and offer a leakage current 50% lower than conventional products on the market. Designed for use in a wide range of applications, the LHA10F and LHA15F are able to operate in a wide temperature range from -10 to +70 degr
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Date:
03/28/2022
Navitas Announces World’s First 20-Year Warranty for GaN ICs
Navitas Semiconductor has announced a breakthrough 20-year limited warranty for its GaNFast technology – 10x longer than typical silicon, SiC or discrete GaN power semiconductors – and a critical accelerator for GaN’s adoption in data center, solar and EV markets.   GaN is a next-generation semiconductor te
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Date:
03/28/2022
650 V MOSFETs in D²PAK for low losses and high reliability
The devices build on Infineon’s state-of-the-art SiC trench technology and come in a compact D 2PAK SMD 7-pin package with .XT interconnection technology. They target high power applications including servers, telecom, industrial SMPS, fast EV charging, motor drives, solar energy systems, energy storage, and batter
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Date:
03/28/2022
Infineon releases new EiceDRIVER 2EDN product family
Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness with fewer external components. Building upon this expansion, the 2EDN family is now able to drive the power s
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Date:
03/28/2022
Infineon is launching EDT2 IGBTs in a TO247PLUS package
The devices are optimized for automotive discrete traction inverters and expand Infineon's portfolio of discrete high-voltage devices for automotive applications. Due to their high quality, the IGBTs meet and exceed the industry standard AECQ101 for automotive components. As a result, the devices can significantly increa
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Date:
03/28/2022
Empower Semiconductor Launches First Quad-Output IVR Series
Empower Semiconductor, Inc. has announced a series of quad-output step-down converters that combine the industry’s highest current density and efficiency, the fastest dynamic voltage scaling (DVS) and transient response, and extensive fault protection. As with previous members of Empower’s IVR family, the ne
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Date:
03/21/2022
High-Power Totem Pole PFC Controller Meets Challenging Efficiency Standard
onsemi introduced its latest mixed-signal controller dedicated to bridgeless totem pole PFC (TP PFC) topology. The NCP1681 targets ultra-high density offline power supplies. Building upon the success of the NCP1680, which is suited for designs up to 350 W, the new controller extends th
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Date:
03/21/2022
650 V SiC MOSFETs Deliver Reliable, Easy-to-Use, and Cost-Effective Top Performance
Megatrends like digitalization, urbanization, and electromobility lead to increased power consumption. At the same time, energy efficiency is getting more and more important. Infineon Technologies AG responds to these megatrends and resulting demands by offering a new family of CoolSiC 650 V silicon carbide (S
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Date:
03/21/2022
Active Front End Rectifier

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1: Introduction Battery chargers for electric vehicles require galvanic isolation between the grid connection and the batteries. Therefore, an EV charger almost always has two stages: a high power-quality rectifier that converts AC to DC, followed by a DC-DC converter utilizing a high-frequency transformer
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Date:
03/15/2022
600V 110mOhm and 140mOhm Super Junction MOSFETs in DFN8x8 Package
Alpha and Omega Semiconductor Limited (AOS) announced the release of 600V 110mOhm and 140mOhm αMOS5 Super Junction MOSFETs in DFN8x8 Package. αMOS5 is AOS’s latest generation of high voltage MOSFET, designed to meet the high efficiency and high-density needs for Quick Charger, Adapter, PC Power, Server, In
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Date:
03/11/2022
24 GHz to 44 GHz Wideband Integrated Upconverters and Downconverters Boost Microwave Radio Performance While Reducing Size

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Figure 1a: The ADMV1013 upconverter chip block diagram

Analog Devices launched a pair of highly integrated microwave upconverter and downconverter chips, the ADMV1013 and the ADMV1014, respectively. These ICs operate over a very wide frequency range with 50 Ωmatch from 24 GHz up to 44 GHz and can support more than 1 GHzinstantaneous bandwidth. Performance attributes of
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Date:
03/01/2022