­5th Gen SiC MOSFETs and evolved Power Package Portfolio

Rohm was one of the original pioneers of SiC technology. The company keeps the entire production process in-house, from from raw powder to module packaging, and has been mass-producing SiC devices since 2010. It was also the company to first introduce trench-type SiC MOSFETs, utilizing an original double trench structure to solve oxide film damage issues and improve efficiency. This year, it launched its 5th Generation SiC devices at PCIM in Nuremberg. The new devices are intended for applications that require low on-resistance at high temperatures, such as automotive electric powertrain systems, power supplies for AI servers or industrial equipment.

A key highlight of this new generation is the roughly 30% reduction in RDS(on) at 175°C compared to the previous generation for the same chip size. This directly reduces conduction losses and allows smaller chips in applications where semiconductor die area is dictated by high current operating points.

Additional features of the new chip generation include higher pulsed body diode current capability which allows higher peak currents in the application. The extended gate voltage rating of the 5th generation permits static gate voltages of -7V to +23V, while providing additional margins for transient peaks. This simplifies gate-driver design and enables very fast switching without exceeding device limits.

According to Christian Felgemacher, Director Application Engineering at ROHM Semiconductor, the system-level impact of these improvements is substantial. He explained, “In traction inverter applications, the new 5th generation SiC MOSFETs can deliver up to 16% higher RMS current capability within the same module footprint and with the same chip area compared to the previous generation. This leads to higher output power or reduces costs through smaller chips. Similarly, in on-board chargers, the new generation can reduce losses by nearly 20% assuming the same chip size. This can simplify cooling system design or reduce costs through further chip size optimisations.”

The datacentre segment represents another rapidly growing application area for SiC power devices. AI workloads are driving power consumption to unprecedented levels. As a result, highly efficient power conversion stages are critical, while 800V DC systems are emerging. Here, too, the key features of the 5th generation SiC MOSFETs are expected to make a significant contribution to efficiency improvements.

While device technology plays a central role, packaging is increasingly becoming a key enabler of system performance. In addition to the announcement of the new generation of SiC device technology, ROHM has expanded its package portfolio which is already available for the current 4th generation device family, to meet diverse application needs.

New package options such as TOLL (TO-leadless) provide compact, surface-mount solutions with improved thermal and electrical performance, enabling more efficient use of PCB space. For higher power applications, top-side cooled packages like TSC3PAK allow direct coupling to heatsinks, significantly improving heat dissipation and enabling more compact system designs.

On the module side, innovations such as the latest TRCDRIVE pack support advanced module-to-heatsink attachment technologies like silver sintering. This enhances thermal conductivity and long-term reliability, particularly in applications exposed to thermal cycling and high mechanical stress.

Felgemacher finishes by saying, “all in all, these topics illustrate a broader trend: performance improvements are no longer driven by semiconductor technology alone. Instead, combining advanced device technology with optimised packaging is key to unlock the highest levels of system efficiency and power density. At ROHM, we are confident that our 5th generation SiC MOSFET technology, combined with our newest packages, will enable the next level of efficiency in many of our customers’ target applications.”

https://www.rohm.com/news-detail?news-title=2026-04-21_news_sic-mosfet&defaultGroupId=false