Powering Embedded Systems
September 2021
According to UnitedSiC, that RDS(on) value of 6mohms is less than half the nearest SiC MOSFET competitor. The new device also provides a robust short-circuit withstand time rating of 5μs.
The 9 new device/package options in the 750V SiC FET series include rated at 6, 9, 11, 23, 33, and 44mohms. All devices are avail
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Date:
09/30/2021
TRACO POWER’s new TXLN line comprises a series of metal enclosed AC/DC power supplies ranging from 18 to 960 Watt (split into 12 different power levels) and is designed for a wide range of industrial applications. The TXLN is an active replacement of the older TXL line and is built on the same design principa
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Date:
09/29/2021
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Consumers are very demanding when it comes to electronic devices, such as mobile phones. They want the best screens, instant response and higher performance in smaller and smaller packages. The especially want it to function all day without charging, and if they do need it to charge, they want it done quickly.
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Date:
09/27/2021
The devices feature an improved EMI immunity for automotive and industrial equipment applications requiring high-speed sensing in harsh environments, such as vehicle engine control units and anomaly detection systems for factory automation equipment.
In recent years, advancements in electrification and mounting d
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Date:
09/23/2021
Their clever design purposefully integrates high performance, versatility, interoperability and regulatory compliance to fulfil evermore demanding worldwide applications.
The built-in Digital Signal Processor (DSP) supports the PMBus open standard power management protocol, which enables diagnosti
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Date:
09/16/2021
The new resistor features a standoff construction that offers an improvement over regular flip chip technology.
The FRFS0402 is ideally suited for use in telecommunication network equipment (including 5G, downhole data center, or fiber optics), medical equipment (including pace makers or hearing-
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Date:
09/16/2021
The reference design is a general purpose motor drive which features a nominal power of 22 kW and can be operated directly on a 380 to 480 V three-phase grid. The design can be fully re-used for customization and allows customers to evaluate Infineon’s products under real operating conditions. It is suitable
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Date:
09/16/2021
Gen2 offers higher efficiency and power density levels. The outstanding performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for GaN power semiconductors. In accordance with market requirements, Gen2 will be developed
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Date:
09/16/2021
The handbook summarises tests undertaken: from temperature stability and short-term stability to supply pushing and more.
The IQRB-2 fills the gap between the IQRB-1 and the IQRB-3; the IQRB-1 delivers a superb price performance ratio, whereas the IQRB-3 offers an exceptional phase noise performa
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Date:
09/16/2021
Streamlining power system design and assuring ongoing reliability, this automotive-compliant device provides a controlled and protected power path. It is rated to handle continuous load currents of up to 1.5A. Key applications include protection of vehicle USB ports and ECU supply rails, and infotainment and telem
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Date:
09/16/2021
The output is closely matched between high-side and low-side outputs, to handle high-frequency switching of GaN enhancement-mode FETs.
Also suitable for driving N-channel silicon MOSFETs at up to 20V, the STDRIVEG600 allows the flexibility to apply up to 6V gate-source voltage (VGS) on GaN devices to e
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Date:
09/16/2021
Designed for industrial applications requiring high levels of safety, the LHP150F and the LHP300F are certified according to EN62477-1 (OVC III). The products work over a wide universal input voltage range of 85 to264VAC and have a high typical efficiency rating of 93%. The LHP150F and LHP300F are available in
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Date:
09/16/2021
They are suitable for both low and high switching frequencies. This new technology offers 40 percent improved RDS(on) and over 50 percent lower gate charge (Qg) compared to previous StrongIRFET™ devices. The higher power efficiency thus generated ensures improved overall system performance. The Infineon StrongI
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Date:
09/16/2021
The power module in a SIP-3 package represents a cost-effective solution to meet the requirements for the real-world voltage transients of a 24 V industrial power architecture. The new module operates from 16 to 36 VIN and generates a fixed output voltage of 12 V with current up to 1 A.
The FDSM
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Date:
09/16/2021
The nine new series (LCW15, LCW25, LCW35, LCW50, LCW75, LCW100, LCW150, LCW200 and LCW320) offer power levels from 15W to 320W. All models meet EN 55032 Class B conducted and radiated emissions for easy and low-cost integration and feature an integrated connector cover to enhance safety once installed
The i
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Date:
09/16/2021
The new drivers improve the performance of multiple parallel EconoDUAL modules by 20%, allowing users to eliminate one of every six modules from power inverters and converter stacks. In addition to saving the cost of the driver and module, this reduces control complexity and costs related to modules, wiring, hardware,
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Date:
09/16/2021
The TMC6140-LA 3-phase MOSFET gate driver integrates all three bottom shunt amplifiers to provide a complete motor drive solution with 30-percent improved power efficiency, while simplifying design by reducing component count by half when compared to similar solutions.
The TMC6140-LA is optimized for performan
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Date:
09/16/2021
The Japanese company took that opportunity to host a press conference to explain the reasons for the acquisition further and to launch 39 of the company’s Winning Combinations to demonstrate how the Dialog portfolio meshes with Renasas products to allow Rensas to compete in new areas and applications. The fi
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Date:
09/06/2021
Archive
New Tools Streamline Power System Design Process
Oct 22,2025
Electromagnetic Compatibility
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