Power Supplies
August 2019
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Figure 1: Comparison of Superjunction transistor, SiC MOSFET, and GaN HEMT
The commercial availability of Superjunction transistors 20 years ago, challenged and finally proved wrong the limitations of conventional silicon-based transistors with respect to on-state resistance. What was regarded as revolutionary at that time is standard today. Today there is not a single transistor from 25
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Date:
08/31/2019
The winning team from the Technical University of Munich
In this episode of the PSDcast, we're talking about The Hyperloop Pod Competition and the future of transportation! For the fourth year in a row, the Technical University of Munich took home the top prize (in no small part due to 420 chips from Infineon), and we've got Mathias Kiele-Dunsche, Senior Manager Application Engi
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Date:
08/27/2019
Fort Worth, Texas – TTI, Inc., features a broad and deep inventory of Current Sense Resistors across a wide range of sizes, wattages, values, and technologies. Turn to the TTI Specialists when your application requires precession resistors for power management, current detection or protection.
TTI stocks and profi
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Date:
08/23/2019
Being part of the same power supply family, both the R&S NGL200 and the new R&S NGM200 series offer the same superb performance and specifications to supply extremely stable outputs with a minimum of residual ripple and noise. Devices that switch from a few µA in sleep mode to several A in activ
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Date:
08/21/2019
Anup Bhalla, Vice President Engineering, UnitedSiC
Ultra-High Voltage SiC and Supercascodes
New applications are emerging that require high voltage switch technology which is significantly lower in balance-of-system costs and operating losses than silicon IGBT and IGCT technology. This spans a wide range from solid state transformers, MW motor drives, to smart
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Date:
08/20/2019
A breakthrough in understanding how the quasi-particles known as magnetic monopoles behave could lead to the development of new technologies to replace electric charges.
Researchers at the University of Kent applied a combination of quantum and classic physics to investigate how magnetic atoms interact with each
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Date:
08/14/2019
MALVERN, Pa. — Vishay Intertechnology, Inc. introduced a new 60 V TrenchFET Gen IV n-channel power MOSFET that is the industry's first optimized for standard gate drives to deliver maximum on-resistance down to 4 mΩ at 10 V in the thermally enhanced 3.3 mm by 3.3 mm PowerPAK 1212-8S package. Designed to increase eff
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Date:
08/12/2019
Chinese chip maker Mornsun has created a push-pull DC-DC converter chip IC with integrated mosfets that can deliver up to 1W through an isolation transformer — and the firm offers a selection of transformers.
To maximise the reliability, the chip design has incorporated three key technologies: a soft s
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Date:
08/09/2019
The core characteristic of the TRI line is a sophisticated reinforced isolation system which is able to withstand high test voltages (9000 VDC for 1s and 5000 VAC for 60s) and working voltages (1000 VACrms). Complementing this isolation characteristic is a high Common Mode Transient Immunity of 15 kV/µs.
The
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Date:
08/09/2019
TDK Corporation presents DeltaCap X Black Premium – a new series of EPCOS MKD capacitors for power factor correction (PFC). With rated voltages of between 440 V AC and 850 V AC, the capacitors with an internal delta connection are designed for power factor correction and filtering of harmonics at
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Date:
08/01/2019
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