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Microchip Technology and Hyundai Motor Group Collaborate to Explore 10BASE-T1S Single Pair Ethernet for Future Automotive Connectivity

Microchip Technology announced a collaboration with Hyundai Motor Group (HMG) to explore the adoption of advanced in-vehicle network solutions based on 10BASE-T1S Single Pair Ethernet (SPE) technology. This cooperation effort is intended to support the development of more efficient, reliable and scalable ve

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Date:

02/06/2026

TDK Launches Stackable µPOL Modules Providing up to 200 A Combined for Vertical Power Delivery

TDK Corporation expanded its µPOL family of non-isolated DC-DC power modules by adding the FS1525. This just 3.82 mm high point-of-load (PoL) converter delivers up to 25 A and is engineered to meet the demanding requirements of AI servers, edge computing, and data center systems. By stacking or paralleling se

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Date:

02/05/2026

Dijam Panigrahi, COO of GridRaster

PSDcast – Agentic AI and the Smart Factory

And in order for smart factories to truly evolve, they may need to embrace the insights and preemptive capabilities provided by artificial intelligence. In this way, they can move from the "experimental pilots" of 2025 into a landscape of integrated, agentic autonomy. And on the line to discuss th

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Date:

02/04/2026

GE Vernova Expands its Grid Automation Portfolio with a new Solution for Modern Grids

GE Vernova Inc. announced the launch of a new solution designed to simplify grid operations and protection as electricity networks expand globally and become more complex. GridBeats™ APS (Automation and Protection System) is a new product within GE Vernova’s GridBeats™ portfolio of software-

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Date:

02/03/2026

STMicroelectronics' Space-Grade Driver Supports High-Speed Data and Low-Voltage Logic

Supporting faster data speeds in space applications, ST’s RHFLVDS41 Low-Voltage Differential Signaling driver sets a new performance benchmark among QML-V qualified devices for data exchanges at up to 600Mbps. Having a wide operating-voltage range, from 2.3V-3.6V, the driver is compatible with th

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Date:

02/03/2026

Jason Lomberg, North American Editor, PSD

The Ubiquity of Wide Band-Gap Technology

Jason Lomberg, North American Editor, PSD

Welcome to the February issue! We’re a mere month away from the Applied Power Electronics Conference (APEC), and I’ve started hearing hints and rumblings of the premier event for power design professionals. A large event that attracts over 300 exhibitors and more than 6,000 attendees and which “foc

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Date:

02/01/2026

Ally Winning, European Editor, PSD

GaN Breaks Through Beyond its Traditional Limits

Ally Winning, European Editor, PSD

Welcome to the February edition of Power Systems Design. The Special Report this month is on wide bandgap materials. GaN and SiC have revolutionized the industry in terms of efficiency and power density for a wide number of power applications. However, those benefits trade off with additional complexity, and as

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Date:

02/01/2026

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Figure 1: Side-by-side comparison of cloud-based vision processing vs the instant result of an Edge AI camera

Ultra-Low-Power Edge Processing: Redefining What's Possible in Always-On Intelligence

Dr. Mohamed M. Sabry Aly, CTO & Founder, EMASS

Since the global mainstreaming of generative AI in late 2022, AI now curates TikTok and Instagram, personalizes shopping on Amazon, helps us navigate in Google Maps, powers real-time translation, enables biometric authentication, and flags fraud in financial systems. AI is a daily utility, silently shaping our ch

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Date:

02/01/2026

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Figure 1: Software defined vehicle

Standardized Testing is Critical for Emerging Automotive SerDes and Zonal Architectures

Carrie Browen, Keysight Automotive

Emerging SerDes standards such as OpenGMSL, MIPI A-PHY, and ASA are designed to support high-bandwidth, asymmetric data links between sensors and central processing units. These standards are crucial for managing the growing volume of sensor data, supporting zonal architecture, and ensuring functional safety in

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Date:

02/01/2026

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Figure 1: Stability versus Current

- Low current condition (Vds=200V)

- High current condition (Vds=200V)

Balancing Speed and Stability in Parallel-Connected SiC MOSFETs Designs

Lizhong Zhou, Manager, Business Development, Toshiba

Engineers working with Silicon Carbide (SiC) MOSFETs encounter this firsthand when parallel devices begin exhibiting unexpected oscillations. What starts as a subtle waveform irregularity on an oscilloscope trace can quickly reveal deeper design sensitivities in high-speed switching environments. Parallel-connected SiC MOSFE

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Date:

02/01/2026

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Figure 1: The LTC7891 step-down (buck) converter schematic

Low Voltage GaN Converter Gate Drive and Measurement

Kurk Mathews, Senior Applications Manager, and Luis Onofre Lazaro, Applications Engineer, Analog Devices

Gallium nitride field-effect transistors (GaN FETs) offer faster switching speeds, smaller packages, and lower power losses than silicon FETs. These features allow power converters to run at higher frequencies, reducing overall solution size while maintaining high efficiency. While the basic DC-to-DC converter de

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Date:

02/01/2026

Jason Lomberg, North America Editor, PSD

AI and Brainrot Slop is Taking Over Social Media

Jason Lomberg, North America Editor, PSD

If you feel like social media has gotten even more frivolous lately, you’re not alone. And it’s for the exact reason you think it is. A recent study revealed some alarming stats – anywhere from 21-33% of YouTube’s feed is AI slop or brainrot videos. That is, low-quality, procedurally-generated content m

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Date:

02/01/2026

Ally Winning, European Editor, PSD

Is it a Bird? Is it a Plane? No, it's a Wind Turbine

Ally Winning, European Editor, PSD

There are certain things you come across and think, why didn’t anyone think of that before? Wind turbine manufacturers have long had problems finding land suitable to build on and then going through all of the red tape necessary to get the permissions needed to build on that land. Another factor to consider is

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Date:

02/01/2026

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Figure 1: Simple schematic of the isolated gate driver ADuM4135

Important Characteristics of Insulated Gate Drivers

Thomas Brand, Senior Field Applications Engineer, Analog Devices

In power electronics, as found, for example, in drive technology, IGBTs are frequently used for high voltage and high current switching. These power transistors are voltage controlled and produce their main losses during switching. To minimize the switching losses, it is desirable to have short switching times. Ho

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Date:

02/01/2026