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Renesas' RadiationHardened ICs Take Flight on NASA’s Artemis II Crewed Lunar Mission
Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, today announced its radiationhardened (rad-hard) ICs are being used in NASA’s Artemis II mission, which successfully launched from the Kennedy Space Center in Florida on April 1.
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Date:
04/03/2026
Gallium oxide - the promising ultra-wide band gap material
Copyright: VON ARDENNE
Gallium oxide (Ga₂O₃) — especially in its most stable β phase — is attracting strong interest as an ultra-wide bandgap (UWBG) semiconductor with the potential to redefine power electronics beyond the limits of silicon carbide (SiC) and gallium nitride (GaN).
With a bandgap energy of about 4.7–4.9
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Date:
04/03/2026
