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Figure 1. Infineon StrongIRFET™ and OptiMOS™ power MOSFET 20-300 V technologies
Pvilion CEO Colin Touhey
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Figure 1. Cross-section view of Infineon’s CoolGaN™ GIT device structure
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Figure 1. Comparison of planar and trench MOSFET structure
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Figure 1. Suitability of Si, SiC, and GaN for power supply applications
Illustration of edge magnetism discovered in CrGeTe3 using nanoscale magnetic microscopy
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Figure 1. Examples for extrinsic defects in an amorphous layer, mathematically modeled via a local thinning effect in the gate-oxide of SiC devices
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Figure 1. A 5 V converter with a simple EMI filter at the input passes CISPR 25 Class 5
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Figure 1: Examples of high voltage DC-DC converters for sensitive imaging applications, featuring low ripple, noise, and EMI. Shielded internal transformers and plated steel housings additionally achieve low levels of EM radiation
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Figure 1: Bourns’ recently released IsoMOV hybrid protectors are designed to efficiently manage the current density in the MOV resulting in substantial surge current handling in a given size device. IsoMOV devices are rated to 125ºC with nominal surge ratings of 3 kA, 5 kA, or 8 kA, and are available with Maximum Continuous Operating Voltage ratings up to 555V – ideally suited for 480 V industrial power lines
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Figure 1: A dual-channel architecture to achieve HFT = 1
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Figure 1. SilentMOS LTC7050 has internal symmetrical and small hot loops to minimize the ringing, with (a) showing LTC7050 and (b) showing a conventional DrMOS module
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Figure 1: The Schmitt trigger outputs a constant signal between two switching thresholds
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Figure 1. Typical B-H curve from positive saturation to negative saturation. When H is zero there exists Br which requires -Hc to return to zero. The area within the loop is core loss per cycle
