Power Semiconductors

October 2023

Littelfuse’s Martin Schulz

PSDcast – Preventing Early Failure Rates

Why are power semiconductors limited in their service life and what are some of the biggest contributing factors to early failure rates? Littelfuse’s Martin Schulz is on the call.

Date:

10/16/2023

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Figure 1. Schematic of a 6-phase 1.0 V/200 A LTC7852 converter with FDMF5820DC DrMos. The FSWITCH = 400 kHz.

Flexible, Dual Output, 6-Phase Buck Controller Drives 12 V to 1.0 V/200 A Core Supply with 90.0% Efficiency

Mike Shriver, Senior Applications Engineer and Yingyi Yan, Senior IC Design Engineer

ASICs, FPGAs, and processors in high-performance communication, servers, and computing systems require core power supplies that can produce voltages of 1.0 V (or less) directly from a 12 V or intermediate bus—with maximum load currents sometimes above 200 A. These supplies must meet stringent efficiency and pe

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Date:

10/01/2023

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Figure 1: Reading MOSFET RDS(on) from a standard datasheet

Multi-Dimensional MOSFET Modeling With Interactive Datasheets

Stein Nesbakk, Nexperia

Datasheets are often long and cumbersome, meaning locating and interpreting the required information is not always trivial. Furthermore, the meaning of the listed parameters is rarely explained in the datasheets, and even the slight differences in how they are interpreted can be critical for how a device behaves in

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Date:

10/01/2023

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Figure 1: Field Trench Stop IGBT Structure

All You Need to Know About Using IGBTs

Jinchang Zhou, Product Line Manager, onsemi

The medium-to-high power applications that used IGBTs still exist, as do the devices themselves. In this article we will take a detailed look at IGBTs and then consider existing and emerging topologies that they are suitable for. IGBTs: Physical Structure An IGBT is a semiconductor transistor, or semiconductor swit

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Date:

10/01/2023