Data Centers
May 2021
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Table 1a: Key performance indicators of silicon (Si)-based superjunction technology CoolMOS™ C7 compared to SiC MOSFET CoolSiC™ and GaN HEMT technology CoolGaN™
Introduction
With the recent introduction of active wide bandgap (WBG) power semiconductors on a broad commercial scale, the number of use cases is rapidly increasing. High power applications such as power supplies for server and telecom have been among the first adaptors driving acceptance and early success stories.
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Date:
05/07/2021
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Figure 1: Comparison of temperature dependency of the on-state resistance for different semiconductor technologies, such as Infineon’s CoolMOS™, CoolSiC™, and CoolGaN™
The emergence of cloud-based internet services, artificial intelligence, and cryptocurrency has initiated a strong growth of processing power in data centers worldwide. Since the data centers have also been facing rising electricity and real estate prices, there is a clear trend towards highly efficient and co
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Date:
05/06/2021
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Figure 1: Circuit diagram of the proposed solution using CoolMOS™ in a half-bridge configuration
Introduction
As a result of the pandemic that lately has had a significant impact on our lives, communication networks became a crucial part of critical social infrastructure. To achieve the required server capacities and fast connectivity and address the challenges of this unprecedented situation and, highly
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Date:
05/03/2021
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