Data Centers

April 2022

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Figure 1. Cross-section view of Infineon’s CoolGaN™ GIT device structure

Bringing WBG technology to the next level: Part 2 of 4 Editorial Series sponsored by infineon: Revolutionizing the next-gen power conversion applications

Eric Persson, Senior Principal Engineer, Infineon Technologies

Introduction Gallium Nitride (GaN) technology plays a major part in the wide bandgap revolution currently sweeping the semiconductor industry and manufacturers are racing to enter this burgeoning market. While the top-level advantages of using GaN devices in power electronics applications are clear (including higher switching frequencies, better performance at high temperatures, and lower power losses), the more subtle but nonetheless important differ

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Date:

04/14/2022

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Figure 1. Comparison of planar and trench MOSFET structure

Bringing WBG technology to the next level: Part 3 of 4 Editorial Series sponsored by Infineon: The fundamental game-changers for breakthrough SiC designs

Eva Gabriel, Senior Manager, Product Marketing SiC, Dr. Zhihui Yuan, Director, Technical Marketing SiC discretes, and Andre Lenze, Senior Staff Engineer, SiC low- and medium power modules, all at Infineon Technologies

Introduction Society’s demand for energy is continuously increasing. A plethora of digital content is consumed every day, appliances are connected via the cloud, and vehicle electrification is experiencing a renaissance – all of which are contributing to this energy demand upsurge. At the same time, carbon emis

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Date:

04/14/2022

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Figure 1. Suitability of Si, SiC, and GaN for power supply applications

Bringing WBG technology to the next level: Part 4 of 4 Editorial Series sponsored by Infineon: When to make the move from silicon to wide bandgap

Dr. Gerald Deboy, Distinguished Engineer, Infineon Technologies

Introduction Silicon power devices, such as MOSFETs and IGBTs, have a long history of reliable operation in power applications. They are low-cost, with a proven track record, and there’s a wide choice of suppliers so that designers can have a second source. They are also a familiar, well-established opti

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Date:

04/14/2022

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Figure 1. Examples for extrinsic defects in an amorphous layer, mathematically modeled via a local thinning effect in the gate-oxide of SiC devices

Bringing WBG technology to the next level: Part 1 of 4 Editorial Series sponsored by Infineon: Wide bandgap reliability is all about understanding how and why failures happen

Peter Friedrichs, Vice President SiC, and Tim McDonald, Senior Director, Consulting Advisor to the CoolGaN™ program, both at Infineon Technologies

Introduction The unique properties of Gallium Nitride (GaN) and Silicon Carbide (SiC) devices make them increasingly popular alternatives for silicon in power electronics applications. The appeal of SiC devices lies in their ability to offer unipolar device concepts with low switching losses at high voltages, while GaN devices can switch at much higher frequencies. Although these properties enable smaller

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Date:

04/08/2022

Infineon Rolls Power Management Solution for Intel XEON

Infineon Technologies AG announced the launch of a complete power management offering for compute servers based on Intel’s Sapphire Rapids compute processing units (CPU). This new “pick-and-place” solution utilizes several Infineon power management devices and technologies that deliver optimum po

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Date:

04/01/2022

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Figure 1. Typical B-H curve from positive saturation to negative saturation. When H is zero there exists Br which requires -Hc to return to zero. The area within the loop is core loss per cycle

AC Losses in Magnetic Components

By: George Slama, Würth Elektronik eiSos

What are AC Losses and why are they important? This paper discusses the physical effects and which issues must be observed by design engineers. Furthermore, an approach to determine AC losses with unmatched accuracy is being introduced. In 1892 Charles P. Steinmetz, working for General Electric presented his no

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Date:

04/01/2022