SemiQ announced the launch of its 2nd Generation Silicon Carbide power switch, a 1200V 40mΩ SiC MOSFET, expanding its portfolio of SiC power devices. This MOSFET complements the company’s existing 80mΩ SiC MOSFETs and SiC rectifiers at 650V, 1200V and 1700V.
SemiQ has engineered this MOSFET to provid
By: Roberto Rizzolatti, Senior Staff System Innovation Engineer, Christian Rainer, Senior Staff System Innovation Engineer, and Mario Ursino, Staff System Innovation Engineer, all at Infineon Technologies
Introduction
Approximately half of the energy consumed in a typical data center is wasted, either during power conversion or through cooling. Given the increasingly urgent requirement to reduce CO2 emissions, this undesirable situation required addressing at both system and converter levels. Research [1] indicates that using 48 V power distribution at the rack level would help to reduce power los
By: Eleazar Falco, FAE, Emil Nierges, Product Manager, Würth Elektronik eiSos
In power electronics, semiconductor transistors with a wide bandgap, such as silicon carbide or gallium nitride, are becoming increasingly popular. Higher switching speeds promise higher efficiency and higher power densities. Two reference designs from Würth Elektronik show how an isolated 6 W auxiliary power suppl
