>
>
Wide-Bandgap Semis

 



 

 

Wide-Bandgap Semis

Current
FETs Help Lidar Systems 'See' Better, Increase Efficiency
EL SEGUNDO, Calif. — EPC announces successful AEC Q101 qualification of two additional eGaN devices, addressing a range of applications in the automotive industry and other harsh environments. The new products, EPC2206, and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS)
. . . Read More
Date:
01/16/2019
Looking Forward to 2019
2018 was a quite memorable year for power electronics and this year looks to be even more exciting. Of course, PSD will be there all the way to bring you the latest updates in the industry around the world. The main focal point of the year, at least in Europe, will be the PCIM exhibition, held in Nuremberg in
. . . Read More
Date:
01/16/2019
DURHAM, N.C. and GENEVA — Cree, Inc. announces that it signed a multi-year agreement to produce and supply its Wolfspeed silicon carbide (SiC) wafers to STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications. The agreement governs the supply
. . . Read More
Date:
01/08/2019

Infineon Breaking Boundaries with Infineon’s New GaN Solution

Click image to enlarge

Figure 1 Cross section of a 600 V CoolGaN™ ™ power transistor [1]

Today’s demand for high-performance, low-cost power conversion products is driven by consumer expectation for longer battery life, faster charging for their phones, electric vehicles (EVs) or power tools. And consumers want faster data communication along with powerful artificial intelligence (AI) capabilities,
. . . Read More
Date:
01/15/2019

 



 Home | Site Map | Contact | Privacy Policy | Refund Policy | Terms of Service | Copyright © 2019 Power Systems Corporation, All rights reserved 
X

Join Our Newsletter

Sign up today for free and be the first to get notified.