Technical Features

March 2026

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Figure 1: Gate driver circuit diagram with a Bourns transformer

Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

While gate driver-based converters deliver improved efficiency, speed and signal integrity, their high frequency switching features can produce elevated levels of conducted electromagnetic interference (EMI), posing challenges to electromagnetic compatibility (EMC) and overall system reliability. To solve this

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Date:

03/29/2026

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Figure 1: Example autonomous mobile robot (AMR) subsystems

Using Output Discharge to Address Power Supply Systematic Failures

Bryan Angelo Borres, and Ino Lorenz Ardiente, Analog Devices

Power supply blocks provide one of the most critical functionalities in electronics systems, as their behavior affects how the system will behave during the different modes of operation—power-up, power-down, steady-state operation, and in the event of failures—which is critical in achieving the safe state in

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Date:

03/01/2026

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Figure 1: A cyclotron application block diagram

Solving High-Voltage Power Challenges

Hafiz Khalid, Director of Product Marketing, XP Power

When integrating a high voltage power supply into equipment that requires very high voltage and high power, accuracy and reliability are critical. This applies whether the equipment is a medical cyclotron or an advanced manufacturing tool such as an e-beam welder. High voltage design presents its own set of ch

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Date:

03/01/2026

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Figure 1: BDS modes

Parallelized Bidirectional Switches Drive Efficiency Higher

Weijing Du, Director of Applications Engineering, Navitas Semiconductor

The push for efficiency in power conversion is unrelenting, especially in systems that need to deliver high power levels on a continuous basis. Though novel power-switching topologies have improved conversion efficiencies, high-power systems can benefit vastly from improvements in semiconductor technology. Topology Considerations

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Date:

03/01/2026

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Figure 1: The evolution of semiconductor architectures from HEXFET (left) to SuperJunction (middle) and the latest SuperQ technology (right), with dielectric charge-balancing structure shown in red

Silicon Reinvented: Architectural Innovations Beyond SuperJunction Power MOSFETs

Ryan Manack, Vice President of Marketing at iDEAL Semiconductor

In the 1970s, the 1D power MOSFET, aka HEXFET™, was introduced. The 1980s saw the launch of the IGBT, and in the 1990s, reduced surface field (RESURF) devices – aka SuperJunction™ devices were introduced. Over the last two decades, improvements in silicon power devices have been largely evolutionary rather th

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Date:

03/01/2026

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Figure 1: The IEEE has evolved PoE standards from 15.4W (802.3af) to 30W (802.3at) and up to 90-100W (802.3bt) to meet rising demand for power-hungry devices

Industrial PoE Switches: Powering the Edge Computing Revolution

Henry Martel, field application engineer, Antaira Technologies

The global edge computing market has reached a transformative inflection point. With valuations ranging from USD 21.4 billion to USD 554.39 billion in 2025 depending on market segmentation, and projected growth rates approaching 28-33.5% CAGR through 2035, the infrastructure demands of distributed computing ar

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Date:

03/01/2026

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Figure 1: A few of the many RECOM DC/DC modules optimized for WBG gate driver applications

Gate Driver Power Supply Challenges for SiC and GaN Devices

Recom Technical Team

Silicon Carbide (SiC) and Gallium Nitride (GaN) are wide‑bandgap (WBG) semiconductor materials offering advantages over traditional silicon (Si) in power electronics because they switch faster with lower losses. They are gaining significant market share in applications where high efficiency and power density ar

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Date:

03/01/2026

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Powering Global Energy Resilience with Backup Solutions

Shaun Zeckmeister, Product Manager, Small Diesel, Rehlko

In an era where energy is essential even with increasingly extreme weather, backup power is no longer optional for critical operations. Power interruptions cost American businesses an estimated $150 billion each year. Add in recent regional outages, such as the 2021 Texas winter freeze that caused up to $130 bi

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Date:

03/01/2026

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Figure 1: ENNOVi-SealTech – ENNOVI’s shrinking method for sealing 3-phase busbars at a lower cost and faster processing time compared to conventional methods

The Shift in Power and the OEM Collaboration Opportunity

Till Wagner, Product Manager Energy Systems, ENNOVI

The automotive industry is undergoing significant change as hybrid and electric vehicles rapidly evolve. Instead of relying on Tier 1 supply partners for the manufacture and supply of systems and modules, OEMs are increasingly bringing development and manufacture in-house. This is particularly true for high-value sy

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Date:

03/01/2026

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Figure 1: High Power Density vs. High Reliability. An isometric view showing how compact designs increase thermal stress, while spaced layouts enhance cooling and reliability

Power Density vs. Reliability in Industrial Motion Systems

Rene Ymzon, Marketing Manager at Advanced Motion Controls

Manufacturers want smaller cabinets, lighter machines, and higher throughput, but they also expect equipment to operate for years in harsh environments, including heat, dust, vibration, and electrical noise. As automation spreads and switching frequencies rise, margins shrink. A few degrees of temperature or

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Date:

03/01/2026

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Figure 1: Silver adhesive paste for die-bonding

Revolutionizing Power Electronics: Silver Adhesive Pastes for Next-Gen Semiconductor Reliability and Thermal Performance

Yoshinori Fushimi, Product Manager for Silver Adhesive Paste, TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd.

As power electronics evolve with the rise of wide-bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN), the demand for advanced die bonding solutions becomes increasingly critical. Die bonding solutions enable power systems that operate at significantly higher switching frequencies, de

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Date:

03/01/2026

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